M07800 - SEMI M78 - Guide for Determining Nanotopography of Unpatterned Silicon Wafers High Volume Manufacturing StdPbc-0524 SEMI E12 — Guide for

SEMI E12 — Guide for Standard Pressure

SEMI E10-92 (technical revision)

Either method may be applied to sheet or bulk specimens

called the SECS Equipment Data Dictionary (SEDD)

M07800 - SEMI M78 - Guide for Determining Nanotopography of Unpatterned Silicon Wafers High Volume Manufacturing StdPbc-0524 SEMI E12 — Guide forFront surface wafer height variations over specified distances need to be properly controlled to assure that wafers are acceptable for selected process steps. Nanotopography parameters are included in the International Technology Roadmap for Semiconductors (ITRS) since 2003. Nanotopography on a wafer surface prior to chemical mechanical planarization (CMP) processes can result in variations of post CMP film thickness with potential negative