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E12500 - SEMI E125 - 装置自己記述(EqSD)の仕様 Revision:SEMI E125-0709 - Superseded ) that can be described

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Description

) that can be described by metadata are to be separately specified in a document dedicated to those concepts

the substrate location

and prefactor of the exponential expression for the emission rate of deep-level defect centers in semiconductor depletion regions by transient-capacitance techniques

It can be extended to the measurement of test specimens polished on one or both sides with thickness in the range 0

E12500 - SEMI E125 - 装置自己記述(EqSD)の仕様 Revision:SEMI E125-0709 - Superseded ) that can be describedglobal Information & Control Committee2010430global Audits and Reviews Subcommittee20106www. semi. org2003720103 Subordinate Document: SEMI E125. 1 0710 EqSDSOAP Referenced SEMI Standards SEMI E30 Generic Model for Communications and Control of Manufacturing Equipment (GEM) SEMI E39 Object Services Standard: Concept, Behavior, and Services SEMI E120 Specification for the Common Equipment Model (CEM) SEMI E120. 1 XML Schema for the Common Equipment

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