MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-0325 Significance — Use of this

Significance — Use of this Guide in communications between customers and vendors can reduce the errors caused by the current use of different nomenclatures for the same feature of a leadframe

The particle removal performance of EFFUs is usually depending on the performance of filter media and air flow rate

and materials acceptance purposes

SEMI M80-0116 (technical revision)

MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-0325 Significance — Use of this1 Purpose 1. 1 Frequently it is essential to control the boron level in heavily doped n type substrates used to make epitaxial wafers because the boron contamination can result in autodoping at the epitaxial silicon substrate interface. 1. 2 SIMS can measure the boron contamination in heavily doped n type substrates. 1. 3 This Test Method can be used for process control, research and development, and materials acceptance purposes. 2 Scope 2. 1 This