M00900 - SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers Revision:SEMI M9-0308 - Superseded testing time

testing time

This Practice covers detection of high densities of shallow etch pits on silicon wafers doped either p- or n-type and with resistivities as low as 0

The tests covered by this Standard are as follows:

the operations or behavior provided by the Recipe Management Standard (RMS)

M00900 - SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers Revision:SEMI M9-0308 - Superseded testing timeThis Specification covers two groups of substrate requirements for monocrystalline high purity gallium arsenide wafers used in semiconductor and electronic device manufacture. Dimensional and crystallographic orientation characteristics and limits on surface defects are the only standardized properties set forth below. A complete purchase specification may require that additional physical, electrical, and bulk properties be defined. These properties