MF067400 - SEMI MF674 - Practice for Preparing Silicon for Spreading Resistance Measurements StdPbc-1022 Stacking faults introduced during epitaxial

Stacking faults introduced during epitaxial growth can cause ‘soft’ electrical characteristics and preferential micro plasma breakdowns in diodes

SEMI E111-0305 (technical revision)

This Specification defines standards that facilitate the host’s knowledge and role in automated and manual reticle pod transfers

SEMI E111-1213 (technical revision)

MF067400 - SEMI MF674 - Practice for Preparing Silicon for Spreading Resistance Measurements StdPbc-1022 Stacking faults introduced during epitaxialResistivity is probably the single most important parameter for the characterization of silicon starting material for semiconductor device fabrication. Spreading resistance measurements are used to measure resistivity variations in raw silicon crystals and completed semiconductor devices. The reproducibility of spreading resistance measurements on silicon specimens is known to depend on the manner of specimen preparation. The interpretation of