MF095100 - SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers Revision:SEMI MF951-02 - Superseded This Guide can also assist

This Guide can also assist producers and users of TSV metrology to develop products and conduct meaningful evaluations

SEMI G69-0996 (first published)

This Document specifies the critical dimensions and locations of the kinematic coupling pins (KCPs) that will support and position the 450 mm carriers

•Sensitivity

MF095100 - SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers Revision:SEMI MF951-02 - Superseded This Guide can also assistThe presence of oxygen can be beneficial to certain manufacturing operations by preventing the formation of process induced defects. To the extent that this is true, it becomes important that the oxygen be uniformly distributed over the entire slice. Multiple test plans are included to satisfy a variety of requirements. The characteristic shape and magnitude of oxygen concentration distributions in crystals are functions of the crystal growth process.