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Two methods for evaluating particle contribution are provided
4-95 (first published)
such as identification for both sides of films
They are not recommended for use in acceptance testing until their precision has been evaluated by interlaboratory comparison unless the parties to the test conduct suitable correlation studies
M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Revision:SEMI M61-0612 (Reapproved 0319) - Superseded Two methods for evaluating particleThis Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer. This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.
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