M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current This Specification defines the properties

This Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography

SEMI E30-0307 (technical revision)

org in July 2006

1  The purpose of this Test Method is to standardize the method for measurement of heat resistance in color filters used for flat panel displays (FPD)

M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current This Specification defines the propertiesIn recent years, ULSI and other devices have been increasingly miniaturized and integrated. As a result, high tech devices use more and more epitaxial wafers (p p+, n n+) which have substrates with lower resistivity, because epitaxial wafers are advantageous over other types of silicon wafers in several respects. For example, their features include integrity of active region of device, gettering capacity, resistance for latch up, etc. On the other