MF172500 - SEMI MF1725 - Practice for Analysis of Crystallographic Perfection of Silicon Ingots StdPbc-0117 SEMI M73 — Test Method

SEMI M73 — Test Method for Extracting Relevant Characteristics from Measured Wafer Edge Profiles

The following properties in Table A1-1 are listed for use as guidelines:

and hydrogen service

SEMI E35-0305 (complete rewrite)

MF172500 - SEMI MF1725 - Practice for Analysis of Crystallographic Perfection of Silicon Ingots StdPbc-0117 SEMI M73 — Test MethodNOTICE: This Document was reapproved with minor editorial changes. The use of silicon wafers in many semiconductor devices requires a consistent atomic lattice structure. Crystal defects disturb local lattice energy conditions that are the basis for semiconductor behavior. These defects have distinct effects on essential semiconductor device manufacturing processes such as alloying and diffusion. This Practice provides guidance regarding procedures