M08400 - SEMI M84 - Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications StdTpc-Automated Test Equipment 本文書は2008年9月に，誤字を訂正するため，編集上の修正がなされた。変更箇所は，¶6

本文書は2008年9月に，誤字を訂正するため，編集上の修正がなされた。変更箇所は，¶6

SEMI E43-0813 (technical revision)

Oxide precipitates in the bulk of a silicon wafer can act as gettering sites for contamination that may be introduced during manufacture of circuits and devices

This document incorporates pertinent dimensional data from SEMI D18

M08400 - SEMI M84 - Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications StdTpc-Automated Test Equipment 本文書は2008年9月に，誤字を訂正するため，編集上の修正がなされた。変更箇所は，¶6Single crystal (monocrystalline) silicon wafers are utilized for essentially all integrated circuits and many other semiconductor devices. Gallium nitride on single crystal silicon wafers represents emerging markets with applications such as high brightness light emitting diodes (HB LED) or high frequency power devices. At present, the specifications for silicon wafer substrates requested by customers of such wafers differ widely. To permit common