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including devices in the 180 and 130 nm technology generations in the third table
注意： 本安全ガイドラインで使われる公式な値は，国際単位系（SI）によって表示されている。数字データのうち，
It applies to substrates whose nominal thickness specification is 1
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M09500 - SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode Revision:SEMI M95-0925 - Current including devices in the 1801 Purpose 1. 1 The net carrier density and the resistivity of silicon epitaxial layers are critical parameters in semiconductor device design. Controlling these values during the semiconductor device manufacturing process is essential in determining the devices performance through the margin of the semiconductor device design. 1. 2 This Test Method can be used for research and development, process control, as well as material specification,
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